CEB71A3

CEP71A3/CEB71A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 70A,RDS(ON) = 7.5mΩ @VGS = 10V. RDS(ON) = 10.5mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 70 210 65 0.53 Operating and Store Temperature Range TJ,Tstg -55 to 175 Units V V A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.9 62.5 Units C/W C/W 2002.December 4 - 146 http://www.cetsemi.com CEP71A3/CEB71A3 Electrical Characteristics Tc = 25 C unles...