Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Features
175 °C maximum operating temperature Temperatu...
Silicon Carbide Junction
Transistor/
Schottky Diode Co-pack
Features
175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Integrated SiC
Schottky Rectifier Positive temperature coefficient for easy paralleling Low intrinsic device capacitance Low gate charge
Advantages
Low switching losses High circuit efficiency High temperature operation High short circuit withstand capability Reduced cooling requirements Reduced system size
Package
RoHS Compliant
D
GA20SICP12-263
VDS VDS(ON) ID RDS(ON)
= = = =
1200 V 1.4 V 20 A 70 mΩ
GDS
TO-263
Applications
Down Hole Oil Drilling, Geothermal Instrumentation Hybrid Electric Vehicles (HEV) Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Induction Heating Uninterruptible Power Supply (UPS) Motor Drives
Maximum Ratings at Tj = 175 °C, unless otherwise specified
P...