BD241A/B/C BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
s s
SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - ...
BD241A/B/C BD242A/B/C
COMPLEMENTARY SILICON POWER
TRANSISTORS
s s
SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY
PNP -
NPN DEVICES
DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base
NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary
PNP types are BD242A, BD242B and BD242C respectively. TO-220
3 1 2
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
NPN PNP V CER V CEO V EBO IC I CM IB P tot P tot T stg Tj Collector-Base Voltage (R BE = 100 Ω ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Total Dissipation at T amb ≤ 25 o C Storage Temperature Max. Operating Junction Temperature BD241A BD242A 70 60 Value BD241B BD242B 90 80 5 3 5 1 40 2 -65 to 150 150 BD241C BD242C 115 100 V V V A A A W W
o o
Unit
C C
For
PNP types voltage and current values are negative.
June 1997
1/4
BD241A/B/C/BD242A/B/C
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.13 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CEO for BD241A/BD242A for BD241B/BD242B for BD241C/BD242C V EB = 5 V I...
