POWER TRANSISTORS. BD242A Datasheet

BD242A TRANSISTORS. Datasheet pdf. Equivalent


Part BD242A
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Feature BD241A/B/C BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES .
Manufacture STMicroelectronics
Datasheet
Download BD242A Datasheet


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BD242A
BD241A/B/C
BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD241A, BD241B and BD241C are silicon
epitaxial-base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD242A,
BD242B and BD242C respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCER Collector-Base Voltage (RBE = 100 )
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
ICM Collector Peak Current
IB Base Current
Ptot Total Dissipation at Tc 25 oC
Ptot Total Dissipation at Tamb 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
June 1997
NPN
PNP
BD241A
BD242A
70
60
Value
BD241B
BD242B
90
80
5
3
5
1
40
2
-65 to 150
150
BD241C
BD242C
115
100
Unit
V
V
V
A
A
A
W
W
oC
oC
1/4



BD242A
BD241A/B/C/BD242A/B/C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3.13
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES
ICEO
Collector Cut-off
Current (VBE = 0)
Collector Cut-off
Current (IB = 0)
VCE = rated VCEO
for BD241A/BD242A
for BD241B/BD242B
for BD241C/BD242C
VCE = 30 V
VCE = 60 V
VCE = 60 V
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
VEB = 5 V
IC = 30 mA
for BD241A/BD242A
for BD241B/BD242B
for BD241C/BD242C
VCE(sat)Collector-Emitter
Saturation Voltage
IC = 3 A
IB = 0.6 A
VBEBase-Emitter Voltage IC = 3 A
VCE = 4 V
hFEDC Current Gain
IC = 1 A
IC = 3 A
VCE = 4 V
VCE = 4 V
hfe Small Signal Current IC = 0.5 A
Gain
IC = 0.5 A
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
For PNP types voltage and current values are negative.
For the characteristics curves see TIP31/TIP32 series.
VCE = 10 V f = 1MHz
VCE = 10 V f = 1KHz
Min.
60
80
100
25
10
3
20
Typ.
Max.
0.2
0.3
0.3
0.3
1
1.2
1.8
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
2/4







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