AOT42S60/AOB42S60
600V 37A α MOS TM Power Transistor
General Description
Product Summary
The AOT42S60 & AOB42S60 have...
AOT42S60/AOB42S60
600V 37A α MOS TM Power
Transistor
General Description
Product Summary
The AOT42S60 & AOB42S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these devices can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 166A 0.109Ω 40nC 9.2µJ
Top View
TO-220
TO-263 D2PAK
D
AOT42S60
Orderable Part Number
AOT42S60L AOB42S60L
GDS G
AOB42S60
Package Type
TO-220 Green TO-263 Green
G
S
S
Form Minimum Order Quantity
Tube
1000
Tape & Reel
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT42S60/AOB42S60
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain Current
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy C
EAR
Single pulsed avalanche energy G
EAS
37 23 166 11 234 1345
TC=25°C Power Dissipation B Derate above 25oC
PD
417 3.3
MOSFET dv/dt ruggedness
100
Peak diode recovery dv/dt H
dv/dt
20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
...