AOTF42S60
600V 39A a MOS TM Power Transistor
General Description
Product Summary
The AOTF42S60 has been fabricated us...
AOTF42S60
600V 39A a MOS TM Power
Transistor
General Description
Product Summary
The AOTF42S60 has been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 166A 0.099W 40nC 9.2mJ
Top View D
TO-220F
G
S GD
AOTF42S60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOTF42S60 AOTF42S60L
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain Current
TC=25°C TC=100°C
ID
39*
39*
25*
25*
Pulsed Drain Current C
IDM
166
Avalanche Current C
IAR
11
Repetitive avalanche energy C
EAR
234
Single pulsed avalanche energy G
EAS
1345
TC=25°C Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
PD dv/dt
50
37.9
0.4
0.3
100
20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D
Symbol RqJA
AOTF42S60 AOTF42S60L
65
65
Maximum Junction-to-Case
RqJC
2.5
3.3
* Drain current limited by maximum junction temperature.
S
Units V V
A
A mJ mJ W W/ oC V/ns °C
°C
...