BD242C

BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications Complement to BD241/A/B/C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 45 - 60 - 80 - 100 - 55 - 70 - 90 - 115 -5 -3 -5 -1 40 150 - 65 ~ 150 Units V V V V V V V V V A A A W °C °C VCER VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD242 : BD242A : BD242B : BD242C Collector Cut-off Current Collector Cut-off Current : BD242/A : BD242B/C : BD242 : BD242A : BD242B : BD242C Test Condition IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 0.3 - 0.3 - 0.2 - 0.2 - 0.2 - 0.2 -1 25 10 - 1.2 - 1.8 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A IC = - 3A, IB = - 0.6A VCE = - 4V, IC = - 3A IEBO hFE VCE(sat) VBE(on) Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON...