BD242C

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features High Current Gain − Bandwidth Product Compact TO−220 AB Package Epoxy Meets UL94 V−0 @ 0.125 in These Devices are Pb−Free and are RoHS Compliant* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current −Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Peak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25°C Derate above 25°C Symbol VCEO VCES VEB IC ICM IB PD BD241C BD242B BD242C 80 100 90 115 5.0 3.0 5.0 1.0 40 0.32 Unit Vdc Vdc Vdc Adc Adc Adc W W/°C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction Temperature Range TJ, Tstg – 65 to + 150 °C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎESD − Human Body Model HBM 3B V ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎESD − Machine Model MM C V ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic Symbol Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Ambient ÎÎÎÎÎÎÎÎÎÎ...