Document
BD243/A/B/C
BD243/A/B/C
Medium Power Linear and Switching Applications
• Complement to BD244, BD244A, BD244B and BD244C respectively
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD243 : BD243A : BD243B : BD243C VCEO Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 5 6 10 2 65 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units
VEBO IC ICP IB PC TJ TSTG
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C Collector Cut-off Current Collector Cut-off Current : BD243/243A : BD243B/243C : BD243 : BD243A : BD243B : BD243C Test Condition IC=30mA, IB=0 Min. 45 60 80 100 0.7 0.7 0.4 0.4 0.4 0.4 1 30 15 1.5 2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA
ICEO ICES
VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 0.3A VCE = 4V, IC = 3A IC = 6A, IB = 1A VCE = 4V, IC = 6A
IEBO hFE VCE(sat) VBE(on)
Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage
* Pulse Test :PW=300µs, duty Cycle<20% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD243/A/B/C
Typical Characteristics
1000
1.8
VBE(sat)(V), SATURATION VOLTAGE
VCE = 2V
1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
IC = 10.1 IB
hFE, DC CURRENT GAIN
100
10 0.01
0.1
1
10
0.5 0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
1
100
VBE(sat)(V), SATURATION VOLTAGE
IC = 10.1 IB
IC[A], COLLECTOR CURRENT
10
IC(max)
10 m 1m s
10µs 100µ s
s
0.1
DC
1
BD243 BD243A BD243B BD243C
1 10 100
0.01 0.1
0.1
1
10
IC [A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
80
70
PC[W], POWER DISSIPATION
60
50
40
30
20
10
0 0 25 50
o
75
100
125
150
175
200
T[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD243/A/B/C
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 –0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 –0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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