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BD243B Dataheets PDF



Part Number BD243B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Datasheet BD243B DatasheetBD243B Datasheet (PDF)

BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD243 : BD243A : BD243B : BD243C VCEO Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Colle.

  BD243B   BD243B



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BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD243 : BD243A : BD243B : BD243C VCEO Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 5 6 10 2 65 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C Collector Cut-off Current Collector Cut-off Current : BD243/243A : BD243B/243C : BD243 : BD243A : BD243B : BD243C Test Condition IC=30mA, IB=0 Min. 45 60 80 100 0.7 0.7 0.4 0.4 0.4 0.4 1 30 15 1.5 2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 0.3A VCE = 4V, IC = 3A IC = 6A, IB = 1A VCE = 4V, IC = 6A IEBO hFE VCE(sat) VBE(on) Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage * Pulse Test :PW=300µs, duty Cycle<20% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD243/A/B/C Typical Characteristics 1000 1.8 VBE(sat)(V), SATURATION VOLTAGE VCE = 2V 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 IC = 10.1 IB hFE, DC CURRENT GAIN 100 10 0.01 0.1 1 10 0.5 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage 1 100 VBE(sat)(V), SATURATION VOLTAGE IC = 10.1 IB IC[A], COLLECTOR CURRENT 10 IC(max) 10 m 1m s 10µs 100µ s s 0.1 DC 1 BD243 BD243A BD243B BD243C 1 10 100 0.01 0.1 0.1 1 10 IC [A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area 80 70 PC[W], POWER DISSIPATION 60 50 40 30 20 10 0 0 25 50 o 75 100 125 150 175 200 T[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD243/A/B/C Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns.


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