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BD244B Dataheets PDF



Part Number BD244B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Datasheet BD244B DatasheetBD244B Datasheet (PDF)

BD244/A/B/C BD244/A/B/C Medium Power Linear and Switching Applications • Complement to BD243, BD243A, BD243B and BD243C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD244 : BD244A : BD244B : BD244C VCEO Collector-Emitter Voltage : BD244 : BD244A : BD244B : BD244C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Colle.

  BD244B   BD244B



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BD244/A/B/C BD244/A/B/C Medium Power Linear and Switching Applications • Complement to BD243, BD243A, BD243B and BD243C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD244 : BD244A : BD244B : BD244C VCEO Collector-Emitter Voltage : BD244 : BD244A : BD244B : BD244C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 -5 -6 - 10 -2 65 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD244 : BD244A : BD244B : BD244C Collector Cut-off Current Collector Cut-off Current : BD244/244A : BD244B/244C : BD244 : BD244A : BD244B : BD244C Test Condition IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 0.7 - 0.7 - 0.4 - 0.4 - 0.4 - 0.4 -1 30 15 - 1.5 -2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 0.3A VCE = - 4V, IC = - 3A IC = - 6A, IB = - 1A VCE = - 4V, IC = - 6A IEBO hFE VCE(sat) VBE(on) Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage * Pulse Test: PW =300µs, duty Cycle =2% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD244/A/B/C Typical Characteristics 1000 -1.8 VBE(sat)(V), SATURATION VOLTAGE VCE = 2V -1.7 -1.6 -1.5 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 IC = 10.1 IB hFE, DC CURRENT GAIN 100 10 -0.01 -0.1 -1 -10 -0.5 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage -1 -100 VCE(sat)(V), SATURATION VOLTAGE IC = 10.1 IB IC[A], COLLECTOR CURRENT -10 IC(max) 10 m 10µ s 1m s s -0.1 100µ s DC -1 BD244 BD244A BD244B BD244C -0.01 -0.1 -0.1 -1 -10 -1 -10 -100 -1000 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area 80 70 PC[W], POWER DISSIPATION 60 50 40 30 20 10 0 0 25 50 o 75 100 125 150 175 200 T[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD244/A/B/C Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor .


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