Document
BD244/A/B/C
BD244/A/B/C
Medium Power Linear and Switching Applications
• Complement to BD243, BD243A, BD243B and BD243C respectively
1
TO-220 2.Collector 3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD244 : BD244A : BD244B : BD244C VCEO Collector-Emitter Voltage : BD244 : BD244A : BD244B : BD244C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 -5 -6 - 10 -2 65 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units
VEBO IC ICP IB PC TJ TSTG
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD244 : BD244A : BD244B : BD244C Collector Cut-off Current Collector Cut-off Current : BD244/244A : BD244B/244C : BD244 : BD244A : BD244B : BD244C Test Condition IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 0.7 - 0.7 - 0.4 - 0.4 - 0.4 - 0.4 -1 30 15 - 1.5 -2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA
ICEO ICES
VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 0.3A VCE = - 4V, IC = - 3A IC = - 6A, IB = - 1A VCE = - 4V, IC = - 6A
IEBO hFE VCE(sat) VBE(on)
Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage
* Pulse Test: PW =300µs, duty Cycle =2% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD244/A/B/C
Typical Characteristics
1000
-1.8
VBE(sat)(V), SATURATION VOLTAGE
VCE = 2V
-1.7 -1.6 -1.5 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6
IC = 10.1 IB
hFE, DC CURRENT GAIN
100
10 -0.01
-0.1
-1
-10
-0.5 -0.1
-1
-10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
-1
-100
VCE(sat)(V), SATURATION VOLTAGE
IC = 10.1 IB
IC[A], COLLECTOR CURRENT
-10
IC(max)
10 m
10µ s
1m s
s
-0.1
100µ s
DC
-1
BD244 BD244A BD244B BD244C
-0.01 -0.1
-0.1
-1
-10
-1
-10
-100
-1000
IC[A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
80
70
PC[W], POWER DISSIPATION
60
50
40
30
20
10
0 0 25 50
o
75
100
125
150
175
200
T[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD244/A/B/C
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 –0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 –0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor .