Document
1N4099 THRU 1N4135
SILICON ZENER DIODE LOW NOISE
6.8 VOLT THRU 100 VOLT 250mW, 5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4099 series silicon Zener diode is designed for low leakage, low current, and low noise applications.
MARKING: Devices shall either be marked with the prefix ‘C’ followed by the full part number or by the marking code in the Electrical Characteristics Table.
DO-35 CASE
MAXIMUM RATINGS: (TA=25°C) Power Dissipation
Operating and Storage Junction Temperature
SYMBOL PD
TJ, Tstg
250 -65 to +200
UNITS mW °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
TYPE
ZENER VOLTAGE VZ @ IZT MIN NOM MAX
TEST CURRENT
IZT
MAXIMUM ZENER
IMPEDANCE
ZZT @ IZT
MAXIMUM REVERSE CURRENT
IR @ VR
MAXIMUM ZENER
CURRENT
IZM
MAXIMUM NOISE
DENSITY
ND @ 250μA
V
V
V
μA
Ω
μA
V
mA
μV/ Hz
1N4099 6.460 6.8 7.140
250
200
10
5.2
35.0
40
1N4100 7.125 7.5 7.875
250
200
10
5.7
31.8
40
1N4101 7.790 8.2 8.610
250
200
1.0 6.3
29.0
40
1N4102 8.265 8.7 9.135
250
200
1.0 6.7
27.4
40
1N4103 8.645 9.1 9.555
250
200
1.0 7.0
26.2
40
1N4104 9.50 10 10.50
250
200
1.0 7.6
24.8
40
1N4105 10.45 11 11.55
250
200
0.05 8.5
21.6
40
1N4106 11.40 12 12.60
250
200
0.05 9.2
20.4
40
1N4107 12.35 13 13.65
250
200
0.05 9.9
19.0
40
1N4108 13.30 14 14.70
250
200
0.05 10.7
17.5
40
1N4109 14.25 15 15.75
250
100
0.05 11.4
16.3
40
1N4110 15.20 16 16.80
250
100
0.05 12.2
15.4
40
1N4111 16.15 17 17.85
250
100
0.05 13.0
14.5
40
1N4112 17.10 18 18.90
250
100
0.05 13.7
13.2
40
1N4113 18.05 19 19.95
250
150
0.05 14.5
12.5
40
1N4114 19.00 20 21.00
250
150
0.01 15.2
11.9
40
1N4115 20.90 22 23.10
250
150
0.01 16.8
10.8
40
1N4116 22.80 24 25.20
250
150
0.01 18.3
9.9
40
1N4117 23.75 25 26.25
250
150
0.01 19.0
9.5
40
1N4118 25.65 27 28.35
250
150
0.01 20.5
8.8
40
1N4119 26.60 28 29.40
250
200
0.01 21.3
8.5
40
1N4120 28.50 30 31.50
250
200
0.01 22.8
7.9
40
1N4121 31.35 33 34.65
250
200
0.01 25.1
7.2
40
MARKING CODE
C4099 C4100 C4101 C4102 C4103 C4104 C4105 C4106 C4107 C4108 C4109 C4110 C4111 C4112 C4113 C4114 C4115 C4116 C4117 C4118 C4119 C4120 C4121
R2 (6-December 2019)
1N4099 THRU 1N4135
SILICON ZENER DIODE LOW NOISE
6.8 VOLT THRU 100 VOLT 250mW, 5% TOLERANCE
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
TYPE
ZENER VOLTAGE VZ @ IZT MIN NOM MAX
TEST CURRENT
IZT
MAXIMUM ZENER
IMPEDANCE
ZZT @ IZT
MAXIMUM REVERSE CURRENT
IR @ VR
MAXIMUM ZENER
CURRENT
IZM
MAXIMUM NOISE
DENSITY
ND @ 250μA
MARKING CODE
V
V
V
μA
Ω
μA
V
mA
μV/ Hz
1N4122 34.20 36 37.80
250
1N4123 37.05 39 40.95
250
1N4124 40.85 43 45.15
250
1N4125 44.65 47 49.35
250
1N4126 48.45 51 53.55
250
1N4127 53.20 56 58.80
250
1N4128 57.00 60 63.00
250
1N4129 58.90 62 65.10
250
1N4130 64.60 68 71.40
250
1N4131 71.25 75 78.75
250
1N4132 77.90 82 86.10
250
1N4133 82.65 87 91.35
250
1N4134 86.45 91 95.55
250
1N4135 95.00 100 105.0
250
200 200 250 250 300 300 400 500 700 700 800 1.0K 1.2K 1.5K
0.01 27.4
6.6
0.01 29.7
6.1
0.01 32.7
5.5
0.01 35.8
5.1
0.01 38.8
4.6
0.01 42.6
4.2
0.01 45.6
4.0
0.01 47.1
3.8
0.01 51.7
3.5
0.01 57.0
3.1
0.01 62.4
2.9
0.01 66.2
2.7
0.01 69.2
2.6
0.01 76.0
2.3
40
C4122
40
C4123
40
C4124
40
C4125
40
C4126
40
C4127
40
C4128
40
C4129
40
C4130
40
C4131
40
C4132
40
C4133
40
C4134
40
C4135
DO-35 CASE - MECHANICAL OUTLINE
w w w. c e n t r a l s e m i . c o m
R2 (6-December 2019)
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