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BD250B

Power Innovations Limited

PNP SILICON POWER TRANSISTORS

BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - ...


Power Innovations Limited

BD250B

File Download Download BD250B Datasheet


Description
BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD249 Series 125 W at 25°C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q q 25 A Continuous Collector Current 40 A Peak Collector Current Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA C 2 absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD250 Collector-emitter voltage (RBE = 100 Ω) BD250A BD250B BD250C BD250 Collector-emitter voltage (IC = -30 mA) BD250A BD250B BD250C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -25 -40 -5 125 3 90 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. This rating is ba...




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