BD336

BD336 SILICON PNP POWER DARLINGTON TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS s DESCRIPTION The BD336 is a silicon epitaxial-base PNP transistor in Darlingon configuration mounted in SOT-82 plastic package. It is inteded for use in audio output stages general amplifier and switching applications. 1 2 3 SOT-82 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 10ms) Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value -100 -100 -5 -6 -10 -0.15 60 -65 to 150 150 Unit V V V A A A W o o C C July 1997 1/4 BD336 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.08 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO V CE(sat) ∗ V BE ∗ h FE ∗ Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Test Conditions V CB = -100 V V CB = -100 V V CE = -50 V V EB = -5 V I C = -3 A I C = -3 A I C = -0.5 A I C = -3 A I C = -6 A I F = -3 A I C = -3 A V CE = -3 V f = 1MHz I B = -12 mA V CE ...