BD376/378/380
BD376/378/380
Medium Power Linear and Switching Applications
• Complement to BD375, BD377 and BD379 respe...
BD376/378/380
BD376/378/380
Medium Power Linear and Switching Applications
Complement to BD375, BD377 and BD379 respectively
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380
1
TO-126 2.Collector 3.Base
1. Emitter
Value - 50 - 75 - 100 - 45 - 60 - 80 -5 -2 -3 -1 25 150 - 55 ~ 150
Units V V V V V V V A A A W °C °C
VCEO
Collector-Emitter Voltage : BD376 : BD378 : BD380 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
VEBO IC ICP IB PC TJ TSTG
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : BD376 : BD378 : BD380 Collector-Base Breakdown Voltage Collector Cut-off Current : BD376 : BD378 : BD380 : BD376 : BD378 : BD380 Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 50 - 75 - 100 -2 -2 -2 - 100 40 20 375 -1 - 1.5 50 500 V V ns ns Typ. Max. Units V V V V V V µA µA µA µA
BVCBO
IC = - 100µA, IE = 0
ICBO
VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.15A VCE = - 2V, IC = - 1A IC = - 1A, IB = - 0.1A VCE = - 2V, IC = -1A VCC = - 30V, IC = - 0.5A IB1 = - IB2 = - 0.05A RL = 60Ω
IEBO hFE1 hFE2 VCE(sat) VBE(on) tON tOFF
Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage ...