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BD380 Dataheets PDF



Part Number BD380
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Datasheet BD380 DatasheetBD380 Datasheet (PDF)

BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380 1 TO-126 2.Collector 3.Base 1. Emitter Value - 50 - 75 - 100 - 45 - 60 - 80 -5 -2 -3 -1 25 150 - 55 ~ 150 Units V V V V V V V A A A W °C °C VCEO Collector-Emitter Voltage : BD376 : BD378 : BD380 Emitter-Bas.

  BD380   BD380



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BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380 1 TO-126 2.Collector 3.Base 1. Emitter Value - 50 - 75 - 100 - 45 - 60 - 80 -5 -2 -3 -1 25 150 - 55 ~ 150 Units V V V V V V V A A A W °C °C VCEO Collector-Emitter Voltage : BD376 : BD378 : BD380 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : BD376 : BD378 : BD380 Collector-Base Breakdown Voltage Collector Cut-off Current : BD376 : BD378 : BD380 : BD376 : BD378 : BD380 Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 50 - 75 - 100 -2 -2 -2 - 100 40 20 375 -1 - 1.5 50 500 V V ns ns Typ. Max. Units V V V V V V µA µA µA µA BVCBO IC = - 100µA, IE = 0 ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.15A VCE = - 2V, IC = - 1A IC = - 1A, IB = - 0.1A VCE = - 2V, IC = -1A VCC = - 30V, IC = - 0.5A IB1 = - IB2 = - 0.05A RL = 60Ω IEBO hFE1 hFE2 VCE(sat) VBE(on) tON tOFF Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage Turn ON Time Turn OFF Time * Pulse Test: PW=350µs, duty Cycle=2% Pulsed hFE Classificntion Classification hFE1 ©2000 Fairchild Semiconductor International 6 40 ~ 100 10 63 ~ 160 16 100 ~ 250 25 150 ~ 375 Rev. A, February 2000 BD376/378/380 Typical Characteristics 100 -500 80 VCE(sat)(mV), SATURATION VOLTAGE VCE = -2V -400 hFE, DC CURRENT GAIN IC = 20.IB 60 -300 40 -200 20 -100 IC = 10.IB 0 -10 -100 -1000 -0 -1E-3 -0.01 -0.1 -1 -10 IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage -1.1 -10 VBE(V), BASE EMITTER VOLTAGE -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -1E-3 -0.01 -0.1 IC[A], COLLECTOR CURRENT t) (sa V BE 10.I B = c I ICMAX. (Continuous) -1 S/b VBE(on) VCE = -5V LIM D ITE -0.1 -0.01 -0.1 -1 -10 -1 -10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area 40 35 PC[W], POWER DISSIPATION 30 25 20 15 10 5 0 0 25 50 o 75 100 125 150 175 200 Tc[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International BD376 BD378 BD380 VCEO MAX. -100 Rev. A, February 2000 BD376/378/380 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimen.


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