Document
BD376/378/380
BD376/378/380
Medium Power Linear and Switching Applications
• Complement to BD375, BD377 and BD379 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380
1
TO-126 2.Collector 3.Base
1. Emitter
Value - 50 - 75 - 100 - 45 - 60 - 80 -5 -2 -3 -1 25 150 - 55 ~ 150
Units V V V V V V V A A A W °C °C
VCEO
Collector-Emitter Voltage : BD376 : BD378 : BD380 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
VEBO IC ICP IB PC TJ TSTG
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter *Collector-Emitter Sustaining Voltage : BD376 : BD378 : BD380 Collector-Base Breakdown Voltage Collector Cut-off Current : BD376 : BD378 : BD380 : BD376 : BD378 : BD380 Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 50 - 75 - 100 -2 -2 -2 - 100 40 20 375 -1 - 1.5 50 500 V V ns ns Typ. Max. Units V V V V V V µA µA µA µA
BVCBO
IC = - 100µA, IE = 0
ICBO
VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.15A VCE = - 2V, IC = - 1A IC = - 1A, IB = - 0.1A VCE = - 2V, IC = -1A VCC = - 30V, IC = - 0.5A IB1 = - IB2 = - 0.05A RL = 60Ω
IEBO hFE1 hFE2 VCE(sat) VBE(on) tON tOFF
Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage Turn ON Time Turn OFF Time
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
hFE Classificntion
Classification hFE1
©2000 Fairchild Semiconductor International
6 40 ~ 100
10 63 ~ 160
16 100 ~ 250
25 150 ~ 375
Rev. A, February 2000
BD376/378/380
Typical Characteristics
100
-500
80
VCE(sat)(mV), SATURATION VOLTAGE
VCE = -2V
-400
hFE, DC CURRENT GAIN
IC = 20.IB
60
-300
40
-200
20
-100
IC = 10.IB
0 -10
-100
-1000
-0 -1E-3
-0.01
-0.1
-1
-10
IC[mA], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-1.1
-10
VBE(V), BASE EMITTER VOLTAGE
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -1E-3 -0.01 -0.1
IC[A], COLLECTOR CURRENT
t) (sa V BE 10.I B = c I
ICMAX. (Continuous)
-1
S/b
VBE(on) VCE = -5V
LIM D ITE
-0.1
-0.01
-0.1
-1
-10
-1
-10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
40
35
PC[W], POWER DISSIPATION
30
25
20
15
10
5
0 0 25 50
o
75
100
125
150
175
200
Tc[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
BD376 BD378 BD380 VCEO MAX.
-100
Rev. A, February 2000
BD376/378/380
Package Demensions
TO-126
±0.10
3.90
8.00 ±0.30
3.25 ±0.20
14.20MAX
ø3.20 ±0.10
11.00
±0.20
(1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10
±0.30
(0.50) 1.75 ±0.20
#1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20]
13.06
16.10
±0.20
0.50 –0.05
+0.10
Dimen.