Signal Diode. 1N4148 Datasheet

1N4148 Diode. Datasheet pdf. Equivalent

1N4148 Datasheet
Recommendation 1N4148 Datasheet
Part 1N4148
Description Small Signal Diode
Feature 1N4148; 1N91x, 1N4x48, FDLL914, FDLL4x48 Small Signal Diode ORDERING INFORMATION Part Number Marking Pack.
Manufacture ON Semiconductor
Datasheet
Download 1N4148 Datasheet




ON Semiconductor 1N4148
1N91x, 1N4x48, FDLL914,
FDLL4x48
Small Signal Diode
ORDERING INFORMATION
Part Number Marking
Package
1N914
914 DO−204AH (DO−35)
1N914−T50A
914 DO−204AH (DO−35)
1N914TR
914 DO−204AH (DO−35)
1N914ATR
914A DO−204AH (DO−35)
1N914B
914B DO−204AH (DO−35)
1N914BTR
914B DO−204AH (DO−35)
1N916
916 DO−204AH (DO−35)
1N916A
916A DO−204AH (DO−35)
1N916B
916B DO−204AH (DO−35)
1N4148
4148 DO−204AH (DO−35)
1N4148TA
4148 DO−204AH (DO−35)
1N4148−T26A
4148 DO−204AH (DO−35)
1N4148−T50A
4148 DO−204AH (DO−35)
1N4148TR
4148 DO−204AH (DO−35)
1N4148−T50R
4148 DO−204AH (DO−35)
1N4448
4448 DO−204AH (DO−35)
1N4448TR
4448 DO−204AH (DO−35)
FDLL914
Black
SOD−80
FDLL914A
Black
SOD−80
FDLL914B
Black
SOD−80
FDLL4148
Black
SOD−80
FDLL4148−D87Z Black
SOD−80
FDLL4448
Black
SOD−80
FDLL4448−D87Z Black
SOD−80
Packing Method
Bulk
Ammo
Tape and Reel
Tape and Reel
Bulk
Tape and Reel
Bulk
Bulk
Bulk
Bulk
Ammo
Ammo
Ammo
Tape and Reel
Tape and Reel
Bulk
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
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DO−35
Cathode is denoted with a black band
Cathode Band
SOD80
LL−34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
SOD−80 COLOR BAND MARKING
DEVICE 1ST BAND
FDLL914
FDLL914A
FDLL914B
FDLL4148
FDLL4448
BLACK
BLACK
BLACK
BLACK
BLACK
-1st band denotes cathode terminal
and has wider width
© Semiconductor Components Industries, LLC, 2002
October, 2017 − Rev. 4
1
Publication Order Number:
1N914/D



ON Semiconductor 1N4148
1N91x, 1N4x48, FDLL914, FDLL4x48
ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) (Note 1)
Rating
Symbol
Value
Unit
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
DC Forward Current
Recurrent Peak Forward Current
Non−repetitive Peak Forward Surge Current
Pulse Width = 1.0 s
Pulse Width = 1.0 ms
VRRM
IO
IF
If
IFSM
100 V
200 mA
300 mA
400 mA
1.0 A
4.0 A
Storage Temperature Range
TSTG
−65 to +200
°C
Operating Junction Temperature Range
TJ
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTICS
Parameter
Power Dissipation
Thermal Resistance, Junction−to−Ambient
Symbol
PD
RqJA
Max Unit
500 mW
300 °C
ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) (Note 2)
Symbol
Parameter
Conditions
Min Max Unit
VR Breakdown Voltage
VF Forward Voltage 914B / 4448
IR = 100 mA
IR = 5.0 mA
IF = 5.0 mA
100 V
75 V
0.62 0.72 V
916B
IF = 5.0 mA
0.63 0.73 V
914 / 916 / 4148
IF = 10 mA
1.0 V
914A / 916A
916B
IF = 20 mA
IF = 20 mA
1.0 V
1.0 V
914B / 4448
IR Reverse Leakage
CT Total Capacitance 916/916A/916B/4448
IF = 100 mA
VR = 20 V
VR = 20 V, TA = 150°C
VR = 75 V
VR = 0, f = 1.0 MHz
1.0
0.025
50
5.0
2.0
V
mA
mA
mA
pF
914/914A/914B/4148
VR = 0, f = 1.0 MHz
4.0 pF
trr Reverse Recovery Time
IF = 10 mA, VR = 6.0 V (600 mA)
Irr = 1.0 mA, RL = 100 W
4.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Non−recurrent square wave PW = 8.3 ms.
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ON Semiconductor 1N4148
1N91x, 1N4x48, FDLL914, FDLL4x48
TYPICAL PERFORMANCE CHARACTERISTICS
160
Ta=25 oC
150
140
130
120
110
1
23
5
10 20 30
Reverse Current, I R [uA]
50
100
Figure 1. Reverse Voltage vs. Reverse Current
BV − 1.0 to 100 mA
120
Ta= 25 oC
100
80
60
40
20
0
10
20 30
50 70 100
Reverse Voltage, VR [V]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 2. Reverse Current vs. Reverse Voltage
IR − 10 to 100 V
550
Ta= 25 oC
500
450
400
350
300
250
1
23
5
10 20 30 50
Forward Current, I F [uA]
100
Figure 3. Forward Voltage vs. Forward Current
VF − 1 to 100 mA
750
Ta= 25 oC
700
650
600
550
500
450
0.1
0.2 0.3 0.5 1 2 3
Forward Current, I F [mA]
5
10
Figure 4. Forward Voltage vs. Forward Current
VF − 0.1 to 10 mA
1.6
Ta= 25 oC
1.4
1.2
1.0
0.8
0.6
10
20 30 50
100 200 300 500 800
Forward Current, IF [mA]
Figure 5. Forward Voltage vs. Forward Current
VF − 10 to 800 mA
900
Typical
800
700
600
Ta= −40oC
Ta= 25oC
500 Ta= +65oC
400
300
0.01 0.03 0.1 0.3
13
10
Forward Current, IF [mA]
Figure 6. Forward Voltage vs. Ambient Temperature
VF - 0.01 - 20 mA (- 40 to +65°C)
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