1N4531

1N4531, 1N4532 Silicon Epitaxial Planar Switching Diode Applications High-speed switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 20 V at VR = 50 V at VR = 20 V, Tj = 150 OC at VR = 50 V, Tj = 150 OC Diode Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = 10 mA, IR = 60 mA, RL = 100 Ω at IF = 10 mA, IR = 10 mA, RL = 100 Ω Max. 0.45 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm at t = 1 µs at t = 1 ms at t = 1 s Symbol VRRM VR IF IFRM IFSM Ptot Tj Tstg Value 75 75 200 450 4 1 0.5 500 200 - 65 to + 200 Unit V V mA mA A mW OC OC 1N4531 1N4532 1N4531 1N4532 1N4531 1N4532 1N45...