NCEP1520K MOSFET Datasheet

NCEP1520K Datasheet, PDF, Equivalent


Part Number

NCEP1520K

Description

N-Channel Super Trench Power MOSFET

Manufacture

NCE Power Semiconductor

Total Page 7 Pages
Datasheet
Download NCEP1520K Datasheet


NCEP1520K
http://www.ncepower.com
Pb Free Product
NCEP1520K
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP1520K uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
VDS =150V,ID =20A
RDS(ON)=59m(typical) @ VGS=10V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Application
LED backlighting
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
Schematic diagram
Marking and pin assignment
TO-252 -2Ltop view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCEP1520K
NCEP1520K
TO-252-2L
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Drain Source voltage slope, VDS 120 V,
dv/dt
Drain Source voltage slope, VDS 120 V, ISD<ID
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
150
±20
20
14
80
68
0.45
65
50
50
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
V/ns
V/ns
Wuxi NCE Power Co., Ltd
Page 1
V1.1

NCEP1520K
http://www.ncepower.com
Thermal Characteristic
Thermal Résistance, Junction-to-Case(Note 2)
RθJC
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=150V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Gate resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
RG
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=10A
VDS=5V,ID=10A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=75V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=75V, RL=7.5Ω
VGS=10V,RG=3
VDS=75V,ID=10A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=10A
IS
trr TJ = 25°C, IF = IS
Qrr di/dt = 100A/μs(Note3)
Pb Free Product
NCEP1520K
2.2 /W
Min Typ Max Unit
150 -
--
--
-
1
±100
V
μA
nA
2.5 3.3
- 59
- 4.5
15 -
4.5
65
-
-
V
m
S
- 600
- 74.7
- 10.8
PF
PF
PF
- 9.5
- 5.5
- 12.5
-3
- 12
- 5.7
- 2.7
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
20
- 29
-
- 130
-
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Co., Ltd
Page 2
V1.1


Features http://www.ncepower.com Pb Free Product NCEP1520K NCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is un iquely optimized to provide the most ef ficient high frequency switching perfor mance. Both conduction and switching po wer losses are minimized due to an extr emely low combination of RDS(ON) and Qg . This device is ideal for high-frequen cy switching and synchronous rectificat ion. General Features ● VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V ● Excellent gate charge x RDS(on) pr oduct(FOM) ● Very low on-resistance R DS(on) ● 175 °C operating temperatur e ● Pb-free lead plating ● 100% UIS tested Application ● LED backlightin g ● Ideal for high-frequency switchin g and synchronous rectification 100% UI S TESTED! Schematic diagram Marking an d pin assignment TO-252 -2Ltop view Pa ckage Marking and Ordering Information Device Marking Device Device Package NCEP1520K NCEP1520K TO-252-2L Reel Size Ø330mm Tape widt.
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