BD440

BD440/442 BD440/442 Medium Power Linear and Switching Applications Complement to BD439, BD441 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD440 : BD442 VCES Collector-Emitter Voltage : BD440 : BD442 Collector-Emitter Voltage : BD440 : BD442 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 1 TO-126 2.Collector 3.Base 1. Emitter Value - 60 - 80 - 60 - 80 - 60 - 80 -5 -4 -7 -1 36 150 - 65 ~ 1 50 Units V V V V V V V A A A W °C °C VCEO VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD440 : BD442 Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain : BD440 : BD442 : BD440 : BD442 : BD440 : BD442 : BD440 : BD442 : BD440 : BD442 Test Condition IC = - 100mA, IB = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 5V, IC = - 10mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 2A IC = - 2A, IB = - 0.2A VCE = - 5V, IC = - 10mA VCE = -1 V, IC = - 2A VCE = - 1V, IC = - 250mA 3 -0.58 - 1.5 20 15 40 40 25 15 140 140 140 140 Min. -60 -80 - 100 - 100 - 100 - 100 -1 Typ. Max. Units V V µA µA µA µA mA ICBO ICES IEBO hFE VCE(sat) VBE(on) fT * Collector-Emitter Saturation Volt...