VSE006N03MS

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSE006N03MS 30V/58A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 5.4 mΩ 7.4 mΩ 58 A PDFN3333 Part ID VSE006N03MS Package Type PDFN3333 Marking 006N03M Tape and reel information 5000pcs/Reel Absolute aximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Rating V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C 30 58 58 37 190 36.5 ±20 -55 to 150 Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resist...