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VST008N07HS

Vanguard Semiconductor

N-Channel Advanced Power MOSFET

Features  N-Channel  Very low on-resistance  100% Avalanche Tested  Fast Switching  Repetitive Avalanche Allowed up...


Vanguard Semiconductor

VST008N07HS

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Description
Features  N-Channel  Very low on-resistance  100% Avalanche Tested  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Pb-free lead plating; RoHS compliant VST008N07HS 70V/80A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 70 V 7.5 mΩ 80 A TO-220AB Part ID VST008N07HS Package Type TO-220AB Marking 008N07H Tape and reel information 50pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =70°C TC =25°C ID=30A IAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambie...




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