Document
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Technology 100% Avalanche test Pb-free lead plating; RoHS compliant
VS5804AP
55V/105A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
55 V 2.7 mΩ 3.9 mΩ 105 A
PDFN5x6
Part ID VS5804AP
Package Type PDFN5x6
Marking 5804AP
Tape and reel information
3000PCS/Reel
Maximum ratings, at TC =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
TC =25°C TC =25°C TC =100°C TC =25°C
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
TC =25°C
Symbol R JC R JA
Parameter
Thermal Resistance-Junction to Case Thermal Resistance Junction-.