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VS5804AP Dataheets PDF



Part Number VS5804AP
Manufacturers Vanguard Semiconductor
Logo Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Datasheet VS5804AP DatasheetVS5804AP Datasheet (PDF)

Features  N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VS5804AP 55V/105A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 2.7 mΩ 3.9 mΩ 105 A PDFN5x6 Part ID VS5804AP Package Type PDFN5x6 Marking 5804AP Tape and reel information 3000PCS/Reel Maximum ratings, at TC =25°C, unless otherwise specified Symbol Para.

  VS5804AP   VS5804AP


Document
Features  N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VS5804AP 55V/105A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 2.7 mΩ 3.9 mΩ 105 A PDFN5x6 Part ID VS5804AP Package Type PDFN5x6 Marking 5804AP Tape and reel information 3000PCS/Reel Maximum ratings, at TC =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-.


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