VS6406AP

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VS6406AP 60V/83A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 60 V 5.7 mΩ 6.6 mΩ 83 A PDFN5x6 Part ID VS6406AP Package Type PDFN5x6 Marking 6406AP Tape and reel information 3000PCS/Reel Maximum ratings, at TC =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Amb...