VSZ280N15MS

Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSZ280N15MS 150V/3A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID 150 V 230 mΩ 235 mΩ 3 A SOT223 Part ID Package Type VSZ280N15MS SOT223 Marking 280N15M Tape and reel information 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation IS Diode Continuous Forward Current TSTG TJ Storage and operating temperature range① Thermal characteristics TA =25°C TA =100°C TA =25°C TA =25°C TA =25°C R JA Thermal Resistance Junction-Ambient R JC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ③ Rating 150 ±20 3 1.9 12 4.1 3 -55 to 150 30 15 9 Unit V V A A A W A °C °C/W °C/W mJ Copyright Vanguard Semiconductor Co., Ltd Rev B– JUN, 2020 Page - 1 - Total 6 www.vgsemi.com Typical Electrical Characteristics VSZ280N15MS 150V/3A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 150 -- -- V Zero Gate Voltage Drain Current(Tc=25℃) VDS=150V,VGS=0V -- -- 1 ...