N-Channel Advanced Power MOSFET
Features
N-Channel,5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Tech...
Description
Features
N-Channel,5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-free lead plating; RoHS compliant
VSP008N10MS
100V/85A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
100 V 6 mΩ 10 mΩ 85 A
PDFN5x6
Part ID VSP008N10MS
Package Type PDFN5x6
Marking 008N10M
Tape and reel information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
IS ID IDM
IDSM EAS
Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current @VGS=10V Avalanche energy, single pulsed ②
TC =25°C TC =25°C TC =100°C TC =25°C
TA=25°C
TA=70°C
PD Maximum power dissipation
PDSM
Maximum power dissipation③
TSTG , TJ Storage and Junction Temperature Range
Thermal Characteristics
TC =25°C
TA=2...
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