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VST012N12MS

Vanguard Semiconductor

N-Channel Advanced Power MOSFET

Features  N-Channel,5V Logic Level Control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on) @ VGS=4...


Vanguard Semiconductor

VST012N12MS

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Description
Features  N-Channel,5V Logic Level Control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VST012N12MS 120V/63A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 120 V 11.5 mΩ 13 mΩ 63 A TO-220AB Part ID VST012N12MS Package Type TO-220AB Marking Tape and reel information 012N12M 50pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ Drain-Source Breakdown Voltage Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ID Continuous Drain current@VGS=10V IDM Pulse Drain Current Tested ① PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient Drain-Source Avalanche Ratings EA...




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