VSO040N04MD

VSO040N04MD 40V/6A Dual N-Channel Advanced Power MOSFET Features  Dual N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Hg-Free V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 40 32 38 6 SOP8 V mΩ mΩ A Part ID VSO040N04MD Package Type SOP8 Marking 040N04MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG Storage temperature range TJ Maximum Junction Temperature Thermal Characteristics Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C Rating 40 1.4 6 3.8 24 1.8 ±20 -55 to 17...