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VSP007N06MS

Vanguard Semiconductor

N-Channel Advanced Power MOSFET

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche t...


Vanguard Semiconductor

VSP007N06MS

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Description
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant VSP007N06MS 60V/85A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 5.0 mΩ R @DS(on),TYP VGS=4.5V 6.0 mΩ I D 85 A PDFN5x6 Part ID VSP007N06MS Package Type PDFN5x6 Marking Tape and reel information 007N06M 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ID Continuous Drain current@VGS=10V IDM Pulse Drain Current Tested ① PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient Drain-Source Avalanche Ratings EAS Avalanche Energy, Single...




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