VSD140N15MD

Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant VSD140N15MD 150V/10A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID 150 V 125 mΩ 115 mΩ 10 A TO-252 Part ID Package Type VSD140N15MD TO-252 Marking 140N15M Tape and reel information 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage ID IDM PD IS EAS TJ TSTG Continuous drain current@VGS=10V Pulse drain current tested ① Maximum power dissipation Diode Continuous Forward Current Avalanche energy, single pulsed ③ Maximum Junction Temperature Storage temperature range TC =25°C TA =100°C TC =25°C TC =25°C TC =25°C ID=3A Thermal characteristics RJA Thermal Resistance-Junction to Ambient RJC Thermal Resistance-Junction to Case Rating 150 ±20 10 6.4 25 50...