N-Channel Advanced Power MOSFET
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® T...
Description
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Technology 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VS5812AD
55V/50A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
55 V 9.5 mΩ 13.5 mΩ 50 A
TO-252
Part ID VS5812AD
Package Type TO-252
Marking 5812AD
Tape and reel information
2500pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
TC =25°C TC =25°C TC =100°C TC =25°C
TC ...
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