Document
Features
Dual N-Channel,5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiency 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VS3622DP2
30V/42A Dual N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
30 V 7.5 mΩ 11 mΩ 42 A
PDFN5x6
Part ID VS3622DP2
Package Type PDFN5x6
Marking 3622DP2
Tape and reel information
3000pcs/Reel
Maximum ratings, at T A=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
IS
Drain-Source breakdown voltage Gate-Source voltage Body-Diode continuous forward current
ID Continuous drain current @VGS=10V
IDM Pulse drain current tested ①
IDSM Continuous drain current @VGS=10V
EAS
Avalanche energy, single pulsed ②
PD
PDSM
Maximum power dissipation
Maximum power dissipation ③
TSTG , TJ Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
RJC Thermal Resistance.