VS6880AT

Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS6880AT 68V/105A N-Channel Advanced Power MOSFET V DS 68 V R @DS(on),TYP VGS=10 V 6.1 mΩ I D 105 A TO-220AB Part ID VS6880AT Package Type TO-220AB Marking 6880AT Tape and reel information 50pcs/Tube Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C EAS Avalanche energy, single pulsed ② PD Maximum power dissipation PDSM Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics TC =25°C TA=25°C Symbol R JC R JA Parameter Thermal R...