N-Channel Advanced Power MOSFET
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5V Fast Switch...
Description
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5V Fast Switching Pb-free lead plating; RoHS compliant
VSB011N06MS
60V/50A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5V ID
60 V 9 mΩ 11 mΩ 50 A
TDFN3.3x3.3 .
Part ID VSB011N06MS
Package Type TDFN3.3x3.3
Marking 011N06M
Tape and reel information
5000pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
TC =25°C TC =25°C TC =100°C TC =25°C
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
TC =25°C
Symbol
Parameter
RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient
Rating
60...
Similar Datasheet