VS5804BS

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VS5804BS 55V/20A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 3.9 mΩ 4.8 mΩ 20 A SOP8 Part ID VS5804BS Package Type SOP8 Marking 5804BS Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C MSL TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJL Rθ JA Thermal Resistance-Junction to Lead Thermal Resistance-Junction to Amb...