Document
Features
N-Channel,5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche test Pb-free lead plating; RoHS compliant
VSO012N06MS-A
60V/12A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
60 V 11 mΩ 12.8 mΩ 12 A
SOP8
Part ID VSO012N06MS-A
Package Type SOP8
Marking 012N06M
Tape and reel information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS PD VGS
Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage
TA =25°C TA =25°C TA =100°C TA =25°C
TA =25°C
MSL
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
Symbol
Parameter
RθJL Rθ JA
Thermal Resistance-Junction to Lead Thermal Resistance-Junction to Ambient
Rating
60 2.6 .