VS4610AP

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VS4610AP 40V/60A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 40 V 6.6 mΩ 10 mΩ 60 A PDFN5x6 Part ID VS4610AP Package Type PDFN5x6 Marking 4610AP Tape and reel information 3000PCS/Reel Maximum ratings, at TC =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter Rθ JC Thermal Resistance-Junction to Case Rθ JA Thermal Resistance-Junction to Ambient TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C Rating 40 60 60 38 240 58 37 ±20 -55 to 150 Typical 3.4 30 Unit V A A A A mJ W V °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Rev B – OCT, 2020 www.vgsemi.com Electrical Characteristics Symbol Parameter VS4610AP 40V/60A N-Channel Advanced Power MOSFET Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 40 -- -- V Zero Gate Voltage Drain Current VDS=40V,VGS=0V -- -- 1 μA IDSS Zero Ga...