Document
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VS3606ATD
30V/140A N-Channel Advanced Power MOSFET
V DS
30 V
R @DS(on),TYP VGS=10 V
3 mΩ
R @DS(on),TYP VGS=4.5V
4 mΩ
I D 140 A
TO-263
Part ID VS3606ATD
Package Type TO-263
Marking 3606ATD
Tape and reel information
1000pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current @VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
TC =25°C TC =25°C TC =100°C TC =25°C
TC =25°C
Rating
30 1.