VS4410BTD

Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10V  100% Avalanche test  Pb-free lead plating; RoHS compliant VS4410BTD 100V/127A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 100 V 6.7 mΩ 127 A TO-263 Part ID VS4410BTD Package Type TO-263 Marking 4410BTD Tape and reel information 1000PCS/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C Rating 100 127 127 90 508 442 259 ±25 -55 to 1...