VS3622DE Power MOSFET Datasheet

VS3622DE Datasheet, PDF, Equivalent


Part Number

VS3622DE

Description

Dual N-Channel Advanced Power MOSFET

Manufacture

Vanguard Semiconductor

Total Page 5 Pages
Datasheet
Download VS3622DE Datasheet


VS3622DE
Features
Dual N-Channel5V Logic Level Control
Enhancement mode
Low on-resistance RDS(on) @ VGS=4.5 V
Fast Switching
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VS3622DE
30V/35A Dual N-Channel Advanced Power MOSFET
V DS
R @DS(on),TYP VGS=10 V
R @DS(on),TYP VGS=4.5 V
ID
30 V
10 mΩ
14 mΩ
35 A
PDFN3333
Part ID
VS3622DE
Package Type
PDFN3333
Marking
3622DE
Tape and reel
information
5000pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage
Diode continuous forward current
ID Continuous drain current @VGS=10V
IDM
EAS
Pulse drain current tested
Avalanche energy, single pulsed
TC =25°C
TC =25°C
TC =100°C
TC =25°C
PD Maximum power dissipation
VGS Gate-Source voltage
TC =25°C
TSTG Storage temperature range
Thermal Characteristics
Symbol
Parameter
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Rating
30
35
35
22
140
16
20
±20
-55 to 150
Typical
6.2
45
Unit
V
A
A
A
A
mJ
W
V
°C
Unit
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev A NOV, 2017
www.vgsemi.com

VS3622DE
Typical Electrical Characteristics
VS3622DE
30V/35A Dual N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
VGS=0V, ID=250μA
VDS=30V,VGS=0V
VDS=30V,VGS=0V
30
--
--
-- --
V
-- 1 μA
-- 100 μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
VGS(TH) Gate Threshold Voltage
VDS=VGS,ID=250μA 1.3
1.9
RDS(ON) Drain-Source On-State Resistance
VGS=10V, ID=20A
--
10
RDS(ON) Drain-Source On-State Resistance
VGS=4.5V, ID=10A
--
14
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
±100
2.4
13
18
nA
V
Ciss Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg Gate Resistance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Characteristics
VDS=15V,VGS=0V,
f=1MHz
f=1MHz
VDS=15V,ID=20A,
VGS=10V
800
120
90
--
--
--
--
880 950
140 160
110 130
3.5 --
19 --
4.3 --
6.5 --
pF
pF
pF
Ω
nC
nC
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=15V,
ID=20A,
RG=3Ω,
VGS=10V
-- 6
-- 5
-- 25
-- 7
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)
--
--
--
--
nS
nS
nS
nS
VSD
trr
Qrr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=20A,VGS=0V -- 0.9 1.2 V
Tj=25,Isd=20A,
--
7 -- nS
VGS=0V
di/dt=500A/μs
6.3 nC
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 8A, VGS =10V. Part not recommended for use above this value
Pulse width ≤ 300μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev A NOV, 2017
www.vgsemi.com


Features Features  Dual N-Channel5V Logic Leve l Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  F ast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS complia nt  VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET V DS R @DS(on), TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 10 mΩ 14 mΩ 35 A PDFN3333 Part ID VS3622DE Package Type PDFN3333 Marking 3622DE Tape and reel informa tion 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain- Source breakdown voltage Diode continuo us forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, s ingle pulsed ② TC =25°C TC =25°C T C =100°C TC =25°C PD Maximum power d issipation VGS Gate-Source voltage TC =25°C TSTG Storage temperature range Thermal Characteristics Symbol Parame ter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Rati.
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