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VS3622AE

Vanguard Semiconductor

N-Channel Advanced Power MOSFET

Features  N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching ...


Vanguard Semiconductor

VS3622AE

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Description
Features  N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant VS3622AE 30V/45A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 7.9 mΩ 12 mΩ 45 A PDFN3333 Part ID VS3622AE Package Type PDFN3333 Marking 3622AE Tape and reel information 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient R...




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