VSO026N04MD

VSO026N04MD 40V/7A Dual N-Channel Advanced Power MOSFET Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Halogen-Free V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 40 V 23 mΩ 27.5 mΩ 7A SOP8 Part ID VSO026N04MD Package Type SOP8 Marking 026N04MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C TSTG Storage temperature range TJ Maximum Junction Temperature Thermal Characteristics Symbol Parameter RθJL R JA Thermal Resistance-Junction to Lead Thermal Resistance-Junction to Ambient Rating 40 2...