N-Channel Advanced Power MOSFET
Features
N-Channel,10V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avala...
Description
Features
N-Channel,10V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche test Pb-free lead plating; RoHS compliant
VS80N08AN
80V/105A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V ID
80 V 7.2 mΩ 105 A
TO-262
Part ID VS80N08AN
Package Type TO-262
Marking 80N08AN
Tape and reel information 50PCS/Tube
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
Symbol
Parameter
TA =25°C TA =25°C TA =100°C TA =25°C
TA =25°C
RθJC Rθ JA
Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient
Rating
80 105 105 75 420 319 156 ±25 -55 to 175
...
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