Document
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Technology 100% Avalanche test Pb-free lead plating; RoHS compliant
VS5812AE
55V/40A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
55 V 10 mΩ 14.5 mΩ 40 A
PDFN3333
Part ID VS5812AE
Package Type PDFN3333
Marking 5812AE
Tape and reel information
5000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ①
EAS
Avalanche energy, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
Symbol
Parameter
RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient
TC =25°C TC =25°C TC =100°C TC =25°C
TC .