VSM008N07HS

Features  N-Channel，10V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=10V  Fast Switching  100% Avalanche Test  Pb-free lead plating; RoHS compliant VSM008N07HS 70V/83A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 70 V 7.3 mΩ 83 A TO-263 Part ID VSM008N07HS Package Type TO-263 Marking 008N07H Tape and reel information 800pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C Rating 70 83 83 52 332 196 100 ±25...