N-Channel Advanced Power MOSFET
Features
N-Channel,10V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=10V Fast Switching ...
Description
Features
N-Channel,10V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=10V Fast Switching 100% Avalanche Test Pb-free lead plating; RoHS compliant
VSM008N07HS
70V/83A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V ID
70 V 7.3 mΩ 83 A
TO-263
Part ID VSM008N07HS
Package Type TO-263
Marking 008N07H
Tape and reel information 800pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
Symbol
Parameter
RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient
TC =25°C TC =25°C TC =100°C TC =25°C
TC =25°C
Rating
70 83 83 52 332 196 100 ±25...
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