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VSO013N04MS

Vanguard Semiconductor

N-Channel Advanced Power MOSFET

Features  N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avala...


Vanguard Semiconductor

VSO013N04MS

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Description
Features  N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VSO013N04MS 40V/13A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 40 V 11 mΩ 13 mΩ 13 A SOP8 Part ID VSO013N04MS Package Type SOP8 Marking 013N04M Tape and reel information 3000PCS/Reel Maximum ratings, at TC =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C MSL TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJL Thermal Resistance-Junction to Lead RθJA Thermal Resistance Junction-Ambient Rating 40 3.8 13 8.4...




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