VSE005N02KS

Features  N-Channel，2.5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=2.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSE005N02KS 20V/59A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5 V R @DS(on),TYP VGS=2.5 V ID 20 V 4.6 mΩ 6 mΩ 59 A PDFN3333 Part ID VSE005N02KS Package Type PDFN3333 Marking 005N02K Tape and reel information 5000pcs/Reel Absolute aximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Rating V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=4.5V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C 20 59 59 37 236 32 ±12 -55 to 150 Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resist...