N-Channel Advanced Power MOSFET
Features
N-Channel,10V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=10V VitoMOS® Te...
Description
Features
N-Channel,10V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=10V VitoMOS® Technology 100% Avalanche test Pb-free lead plating; RoHS compliant
VS6888BT
65V/88A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10V ID
65 V 5.3 mΩ 88 A
TO-220AB
Part ID VS6888BT
Package Type TO-220AB
Marking 6888BT
Tape and reel information 50PCS/Tube
Maximum ratings, at T j=25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ① PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance Junction-Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed ②
TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C
...
Similar Datasheet