VSF018N10MS

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSF018N10MS 100V/37A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5 V ID 100 V 14 mΩ 15 mΩ 37 A TO-220F Part ID VSF018N10MS Package Type TO-220F Marking 018N10M Tape and reel information 50pcs/Tube Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TC =25°C TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Am...