Document
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance @ VGS=4.5 V Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant
VST090N10MS
100V/15A N-Channel Advanced Power MOSFET
V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID
100 V 72 mΩ 76 mΩ 15 A
TO-220AB
Part ID
Package Type
VST090N10MS
TO-220AB
Marking 090N10M
Tape and reel information
50pcs/Tube
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ① PD Maximum power dissipation IS Diode Continuous Forward Current IAS Avalanche Current Max
TC =25°C TC =70°C TC =25°C TC =25°C TC =25°C
L=0.5mH
EAS
TSTG , TJ
Avalanche energy, single pulsed ② Storage and operating temperature range
Thermal characteristics RJA Thermal Resistance Junction-Ambient RJC Thermal Resistance-Junction t.