VSB003N02LS

Features  N-Channel，3.3V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=3.3V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSB003N02LS 20V/60A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5V R @DS(on),TYP VGS=3.3V ID 20 V 3.6 mΩ 4.2 mΩ 60 A TDFN3.3x3.3 . Part ID VSB003N02LS Package Type TDFN3.3x3.3 Marking 003N02L Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistan...