VST018N10HS

Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VST018N10HS 100V/60A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 100 13.8 60 V mΩ A TO-220AB Part ID VST018N10HS Package Type TO-220AB Marking 018N10H Tape and reel information 50pcs/Tube Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C IAS Avalanche Current Max L=0.5mH PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Ra...